Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

dc.contributor.authorLashkarev, G.V.
dc.contributor.authorSichkovskyi, V.I.
dc.contributor.authorRadchenko, M.V.
dc.contributor.authorAleshkevych, P.
dc.contributor.authorDmitriev, O.I.
dc.contributor.authorButorin, P.E.
dc.contributor.authorKovalyuk, Z.D.
dc.contributor.authorSzymczak, R.
dc.contributor.authorSlawska-Waniewska, A.
dc.contributor.authorNedelko, N.
dc.contributor.authorYakiela, R.
dc.contributor.authorBalagurov, A.M.
dc.contributor.authorBeskrovnyy, A.I.
dc.contributor.authorDobrowolsk, W.
dc.date.accessioned2017-05-26T16:14:44Z
dc.date.available2017-05-26T16:14:44Z
dc.date.issued2011
dc.description.abstractWe present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second antiferromagnetic MnSe phase, and traces of In₄ Se₃ Magnetic measurements reveal ferromagnetic behavior of (In,Mn)Se with the Curie temperature about 800 K. The ferromagnetic cluster model and exchange interaction via 2D electron gas, as the reasons of spontaneous magnetization, are discussed. The dramatic transformation of (In,Mn)Se electron spin resonance (ESR) spectra as a function of temperature is revealed. At the magnetic field perpendicular to crystallographic c axis, a low-field line within the temperature range 70 down to 4.7 K is observed. It shifts to smaller magnetic fields with temperature decrease. Neutron diffraction studies reveal the strong rise for one of the reflection peaks with temperature decrease in the same temperature region where ESR spectra transformation occurs. This peak corresponds to double MnSe interplanar distance in the [111] direction what is a period of its magnetic lattice. Magnetic structure of (In,Mn)Se single crystal is discussed.uk_UA
dc.description.sponsorshipThe authors are grateful to V.V. Slyn’ko for her interest to the work and useful discussions, to R. Minikaev for XRD analysis of samples, and to M. Baran for help in experiment. This work was supported in part by the Program of the NAS of Ukraine “Nanosystems, nanomaterials, nanotechnologies” Grant No. 85/07-H.uk_UA
dc.identifier.citationDiluted magnetic layered semiconductor InSe:Mn with high Curie temperature / G.V. Lashkarev, V.I. Sichkovskyi, M.V. Radchenko, P. Aleshkevych, O.I. Dmitriev, P.E. Butorin, Z.D. Kovalyuk, R. Szymczak, A. Slawska-Waniewska, N. Nedelko, R. Yakiela, A.M. Balagurov, A.I. Beskrovnyy, W. Dobrowolski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 263-268. — Бібліогр.: 22 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 75.20.Ck, 75.30.Hx, 75.50.Pp, 75.70.Cn
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117758
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDiluted magnetic layered semiconductor InSe:Mn with high Curie temperatureuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
01-Lashkarev.pdf
Розмір:
187.29 KB
Формат:
Adobe Portable Document Format

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: