Investigation of the undersurface damaged layers in silicon wafers

dc.contributor.authorHoliney, R.Yu.
dc.contributor.authorMatveeva, L.A.
dc.contributor.authorVenger, E.F.
dc.date.accessioned2017-06-11T13:49:20Z
dc.date.available2017-06-11T13:49:20Z
dc.date.issued1999
dc.description.abstractThe undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm.uk_UA
dc.identifier.citationInvestigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 71.25Rk, 81.60Cp.
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120247
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInvestigation of the undersurface damaged layers in silicon wafersuk_UA
dc.typeArticleuk_UA

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