On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

Abstract

Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance ρX (∞)strain for strain and analogous value for axial pressure deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable information concerning the value ρX (∞)strain even for the case when mobility of carriers and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under irradiation treatment of crystals.