Solar cells based on multicrystalline silicon

dc.contributor.authorPopov, V.G.
dc.date.accessioned2017-06-13T16:58:12Z
dc.date.available2017-06-13T16:58:12Z
dc.date.issued2000
dc.description.abstractThis review comprises modern publications devoted to problems of development and manufacturing photovoltaic solar energy converters (solar cells) based on block multicrystalline silicon (poly-Si). Methods of growing polysilicon ingots, mechanical and chemical treatment, characteristics of polysilicon depending on grain sizes and impurity-defect composition are considered. Methods of improving polycrystalline Si parameters (gettering, treatments in different ambients, passivating treatments) are analyzed. Basic design features of the poly-Si based solar cells and technological modes of their manufacturing are surveyed. It is shown that the efficiency value of such solar cells practically reaches that of similar devices manufactured using single-crystalline Si grown by the Czochralski method. Some problems of measurements of minority non-equilibrium charge carriers lifetime in polycrystalline material are surveyed.uk_UA
dc.description.sponsorshipThe author would like to thank Prof. V. G. Litovchenko and Prof. B. M. Romanjuk for helpful discussions and valuable remarks. This work was partly supported by the STCU Project #U-031.uk_UA
dc.identifier.citationSolar cells based on multicrystalline silicon / V.G. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 479-488. — Бібліогр.: 38 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 84.60.J
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121220
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleSolar cells based on multicrystalline siliconuk_UA
dc.typeArticleuk_UA

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