Effect of an ac electric field on weak electron localization in Bi films

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dc.contributor.authorBelevtsev, B.I.
dc.contributor.authorHasse, J.
dc.contributor.authorAnopchenko, A.S.
dc.contributor.authorBeliayev, E.Yu.
dc.date.accessioned2021-02-04T14:51:21Z
dc.date.available2021-02-04T14:51:21Z
dc.date.issued1996
dc.description.abstractWe have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.uk_UA
dc.description.sponsorshipWe acknowledge gratefully the experimental assistance by E. Scheer. We thank H. v. Lohneysen and the Sonderforschungsbereich 196 for support, and V. A. Shklovskij for helpful discussion and for providing us with his theoretical results prior to publication.uk_UA
dc.identifier.citationEffect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu. Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.uk_UA
dc.identifier.issn0132-6414
dc.identifier.udc539.292
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/176409
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectПо всем тематикам журналаuk_UA
dc.titleEffect of an ac electric field on weak electron localization in Bi filmsuk_UA
dc.typeArticleuk_UA

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Физика низких температур, 1996, № 01