Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
| dc.contributor.author | Rubish, V.M. | |
| dc.contributor.author | Kozusenok, O.V. | |
| dc.contributor.author | Shtets, P.P. | |
| dc.contributor.author | Marjan, V.M. | |
| dc.contributor.author | Gera, E.V. | |
| dc.contributor.author | Tarnaj, A.A. | |
| dc.date.accessioned | 2017-05-29T18:06:30Z | |
| dc.date.available | 2017-05-29T18:06:30Z | |
| dc.date.issued | 2012 | |
| dc.description.abstract | The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed. | uk_UA |
| dc.description.sponsorship | This work was in part supported by Science and Technology Center in Ukraine (project No.5208). | uk_UA |
| dc.identifier.citation | Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 78.20.-e | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118326 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method | uk_UA |
| dc.type | Article | uk_UA |
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