Surface microrelief obtained by composed target deposition for LC molecules alignment

dc.contributor.authorKolomzarov, Yu.
dc.contributor.authorOleksenko, P.
dc.contributor.authorSorokin, V.
dc.contributor.authorTytarenko, P.
dc.contributor.authorZelinskyy, R.
dc.date.accessioned2017-06-15T03:48:54Z
dc.date.available2017-06-15T03:48:54Z
dc.date.issued2006
dc.description.abstractTechnology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by CRS method for various In, Sn concentration and by the polyimide rubbing method are compared. It was shown that such aligning microrelief can create defectless and perfect at the microscopic level nematic LC oriented structures.uk_UA
dc.identifier.citationSurface microrelief obtained by composed target deposition for LC molecules alignment / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 58-62. — Бібліогр.: 12 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 42.79.Kr
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121643
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleSurface microrelief obtained by composed target deposition for LC molecules alignmentuk_UA
dc.typeArticleuk_UA

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