Chemical polishing of InAs, InSb, GaAs and GaSb
| dc.contributor.author | Levchenko, I.V. | |
| dc.contributor.author | Tomashyk, V.M. | |
| dc.contributor.author | Stratiychuk, I.B. | |
| dc.contributor.author | Malanych, G.P. | |
| dc.contributor.author | Stanetska, A.S. | |
| dc.contributor.author | Korchovyi, A.A. | |
| dc.date.accessioned | 2018-06-16T17:23:19Z | |
| dc.date.available | 2018-06-16T17:23:19Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized. | uk_UA |
| dc.identifier.citation | Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. | uk_UA |
| dc.identifier.issn | 1027-5495 | |
| dc.identifier.other | DOI: https://doi.org/10.15407/fm24.04.654 | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/136890 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
| dc.relation.ispartof | Functional Materials | |
| dc.status | published earlier | uk_UA |
| dc.subject | Technology | uk_UA |
| dc.title | Chemical polishing of InAs, InSb, GaAs and GaSb | uk_UA |
| dc.type | Article | uk_UA |
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