Activation transport under quantum Hall regime in HgTe-based heterostructure

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dc.contributor.authorGudina, S.V.
dc.contributor.authorNeverov, V.N.
dc.contributor.authorNovik, E.G.
dc.contributor.authorIlchenko, E.V.
dc.contributor.authorHarus, G.I.
dc.contributor.authorShelushinina, N.G.
dc.contributor.authorPodgornykh, S.M.
dc.contributor.authorYakunin, M.V.
dc.contributor.authorMikhailov, N.N.
dc.contributor.authorDvoretsky, S.A.
dc.date.accessioned2018-01-19T16:41:25Z
dc.date.available2018-01-19T16:41:25Z
dc.date.issued2017
dc.description.abstractWe have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.uk_UA
dc.description.sponsorshipThe research was carried out within the state assignment of FASO of Russia (theme “Spin” No. 01201463330), supported in part by RFBR (project No. 17–02–00330). Samples were grown on the funds of the project “Fundamental Research of Ural Branch of Russian Academy of Sciences, No 15-9-2-21”.uk_UA
dc.identifier.citationActivation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.uk_UA
dc.identifier.issn0132-6414
dc.identifier.otherPACS: 73.63.Hs, 73.43.Qt
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/129428
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectXXI Уральская международная зимняя школа по физике полупроводниковuk_UA
dc.titleActivation transport under quantum Hall regime in HgTe-based heterostructureuk_UA
dc.typeArticleuk_UA

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Физика низких температур, 2017, № 04