Stress-induced effects in light scattering by plasmons in p-type germanium
dc.contributor.author | Poroshin, V.N. | |
dc.contributor.author | Gaydar, A.V. | |
dc.contributor.author | Abramov, A.A. | |
dc.contributor.author | Tulupenko, V.N. | |
dc.date.accessioned | 2017-05-28T16:38:46Z | |
dc.date.available | 2017-05-28T16:38:46Z | |
dc.date.issued | 2003 | |
dc.description.abstract | Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation. | uk_UA |
dc.description.sponsorship | The authors are grateful to F.T. Vasko and O.G. Sarbey for the discussion of results and to V.M. Vasetski for his assistance in carrying out the experiments. | uk_UA |
dc.identifier.citation | Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 78.40. Fy, 73.20. Mf | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118080 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Stress-induced effects in light scattering by plasmons in p-type germanium | uk_UA |
dc.type | Article | uk_UA |
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