Stress-induced effects in light scattering by plasmons in p-type germanium

dc.contributor.authorPoroshin, V.N.
dc.contributor.authorGaydar, A.V.
dc.contributor.authorAbramov, A.A.
dc.contributor.authorTulupenko, V.N.
dc.date.accessioned2017-05-28T16:38:46Z
dc.date.available2017-05-28T16:38:46Z
dc.date.issued2003
dc.description.abstractInfrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation.uk_UA
dc.description.sponsorshipThe authors are grateful to F.T. Vasko and O.G. Sarbey for the discussion of results and to V.M. Vasetski for his assistance in carrying out the experiments.uk_UA
dc.identifier.citationStress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 78.40. Fy, 73.20. Mf
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118080
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleStress-induced effects in light scattering by plasmons in p-type germaniumuk_UA
dc.typeArticleuk_UA

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