Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals

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dc.contributor.authorYaremko, A.M.
dc.contributor.authorYukhymchuk, V.O.
dc.contributor.authorRomanyuk, Yu.A.
dc.contributor.authorVirko, S.V.
dc.date.accessioned2017-06-13T17:45:06Z
dc.date.available2017-06-13T17:45:06Z
dc.date.issued2015
dc.description.abstractRaman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlayer interaction was obtained from comparison of experiment and theory, and effect of this interaction on the frequency of intralayer phonon was studied.uk_UA
dc.identifier.citationTheoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo18.03.354
dc.identifier.otherPACS 71.36.+c, 78.30.Hv
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121246
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleTheoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystalsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3