Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization

dc.contributor.authorNaumov, A.V.
dc.contributor.authorKolomys, O.F.
dc.contributor.authorRomanyuk, A.S.
dc.contributor.authorTsykaniuk, B.I.
dc.contributor.authorStrelchuk, V.V.
dc.contributor.authorTrius, M.P.
dc.contributor.authorAvksentyev, A.Yu.
dc.contributor.authorBelyaev, A.E.
dc.date.accessioned2017-06-13T18:04:31Z
dc.date.available2017-06-13T18:04:31Z
dc.date.issued2015
dc.description.abstractThe effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.uk_UA
dc.identifier.citationSelf-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo18.04.396
dc.identifier.otherPACS 65.80.-g, 73.40.Kp, 78.30.Fs, 78.55.Cr, 85.30.-z
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121254
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleSelf-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterizationuk_UA
dc.typeArticleuk_UA

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