Ultrasound effect on radiation damages in boron implanted silicon

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dc.contributor.authorRomanjuk, B.
dc.contributor.authorKrüger, D.
dc.contributor.authorMelnik, V.
dc.contributor.authorPopov, V.
dc.contributor.authorOlikh, Ya.
dc.contributor.authorSoroka, V.
dc.contributor.authorOberemok, O.
dc.date.accessioned2017-06-11T13:12:33Z
dc.date.available2017-06-11T13:12:33Z
dc.date.issued2000
dc.description.abstractThe radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.uk_UA
dc.description.sponsorshipWe would like to thank Prof. V. Litovchenko and Prof. A. Ourmazd for helpful discussion.uk_UA
dc.identifier.citationUltrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.72T; 66.30L; 61.72
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120227
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleUltrasound effect on radiation damages in boron implanted siliconuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1