Development of a KDP crystal growth system based on TRM and characterization of the grown crystals

Скорочена інформація про документ
dc.contributor.authorJavidi, S.
dc.contributor.authorFaripour, H.
dc.contributor.authorEsmaeil Nia, M.
dc.contributor.authorSepehri, K.F.
dc.contributor.authorAli Akbari, N.
dc.date.accessioned2017-06-03T04:50:29Z
dc.date.available2017-06-03T04:50:29Z
dc.date.issued2008
dc.description.abstractA solution growth system has been built based on temperature reduction method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm dimensions. Spectrophotometer transmission spectra from (100) planes of the grown crystals show about 86 % transmission in the visible region. XRD analysis, laser damage threshold, and microhardness of the crystals were determined. The etching behavior of surface features of grown KDP single crystals was studied in different etchants.uk_UA
dc.description.sponsorshipThe authors are indebted to Dr. M. Maleki for his helpful advices concerning the reviewing of this article, they also wish to thank V. Faghihi on aspects of the laser damage threshold experiment, Z. Dorriz for providing spectral curve, N. Afshari for providing XRD curve, H. Kalbasi for making microhardeness testing, and workshop personnel for their technical assistance.uk_UA
dc.identifier.citationDevelopment of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 42.70.Mp, 77.84.Fa, 81.10.Dn
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119058
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDevelopment of a KDP crystal growth system based on TRM and characterization of the grown crystalsuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
10-Javidi.pdf
Розмір:
200 KB
Формат:
Adobe Portable Document Format
Завантажити

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис:
Завантажити

Колекція

Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 3