Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

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dc.contributor.authorSorokin, V.M.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorKudryk, Ya.Ya.
dc.contributor.authorZinovchuk, A.V.
dc.contributor.authorBigun, R.I.
dc.contributor.authorKudryk, R.Ya.
dc.contributor.authorShynkarenko, V.V.
dc.date.accessioned2017-05-29T16:34:47Z
dc.date.available2017-05-29T16:34:47Z
dc.date.issued2012
dc.description.abstractWe present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated.uk_UA
dc.description.sponsorshipThis work is part of the project 31/4.2.3.1/1833 of the Government Scientific & Technical Target Program “Development and introduction of energy-saving LED light sources and illumination systems based on them”.uk_UA
dc.identifier.citationTechnique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 66.70.Df, 85.60.Jb
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118301
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleTechnique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 2