Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

dc.contributor.authorErmakov, V.M.
dc.contributor.authorKolomoets, V.V.
dc.contributor.authorPanasyuk, L.I.
dc.contributor.authorNazarchuk, P.F.
dc.contributor.authorYashchynskiy, L.V.
dc.date.accessioned2017-05-29T14:43:53Z
dc.date.available2017-05-29T14:43:53Z
dc.date.issued2012
dc.description.abstractThe change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering.uk_UA
dc.identifier.citationContribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 72.20.Dp
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118279
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleContribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 Kuk_UA
dc.typeArticleuk_UA

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