Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells

Gudenko1, Yu.M.; Vainberg, V.V.; Poroshin, V.M.; Tulupenko, V.M.

Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells

dc.contributor.author	Gudenko1, Yu.M.
dc.contributor.author	Vainberg, V.V.
dc.contributor.author	Poroshin, V.M.
dc.contributor.author	Tulupenko, V.M.
dc.date.accessioned	2017-05-26T16:31:56Z
dc.date.available	2017-05-26T16:31:56Z
dc.date.issued	2011
dc.description.abstract	The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under the electric field up to 1500 V/cm are presented.	uk_UA
dc.description.sponsorship	The authors are grateful to Prof. O.G. Sarbey for helpful discussion.	uk_UA
dc.identifier.citation	Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.21.Fg, 73.50.Gr, Pz
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/117768
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells	uk_UA
dc.type	Article	uk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3