Model of optical transitions in A₂B₆ wurtzite type quantum dots

dc.contributor.authorKunets, V.P.
dc.date.accessioned2017-06-11T14:03:45Z
dc.date.available2017-06-11T14:03:45Z
dc.date.issued1999
dc.description.abstractModel of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone and the effective mass anisotropy of the holes are also taken into account. A good agreement between the theoretically calculated and experimentally measured absorption spectra of CdSe and ZnxCd₁₋xS wurtzite nanocrystals embedded into a borosilicate glass matrix is achieved in the framework of the model. It is also concluded that the effective mass approximation is yet enough justified for the nanocrystals with the average radius being lowered to ~2.0 nm.uk_UA
dc.description.sponsorshipThe author wish to express his deep gratitude for fruitful discussions to Prof. Lisitsa M.P. and Dr. Kulish N.R. as well as for the technical assistance to Malysh N.I. and Kunets Vas.P.uk_UA
dc.identifier.citationModel of optical transitions in A₂B₆ wurtzite type quantum dots / V.P. Kunets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 23-27. — Бібліогр.: 16 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.66.H.
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120251
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleModel of optical transitions in A₂B₆ wurtzite type quantum dotsuk_UA
dc.typeArticleuk_UA

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