Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire
dc.contributor.author | Vovk, E.A. | |
dc.contributor.author | Budnikov, A.T. | |
dc.contributor.author | Nizhankovskyi, S.V. | |
dc.contributor.author | Kryvonogov, S.I. | |
dc.contributor.author | Krukhmalev, A.A. | |
dc.contributor.author | Dobrotvorskaya, M.V. | |
dc.date.accessioned | 2017-06-11T05:45:05Z | |
dc.date.available | 2017-06-11T05:45:05Z | |
dc.date.issued | 2013 | |
dc.description.abstract | Physicochemical conditions and polishing suspension composition were established for polishing of AlN/sapphire templates obtained by thermochemical nitridation of sapphire. The use of the polishing suspension based on aerosil and KOH with pH 10.3 allowed to prepare the surface with a roughness Ra up to 1 nm. The morphology and element composition of AlN/sapphire surface at layer-by-layer removal of the nitridated layer were studied by the methods of atomic force microscopy and X-ray photoelectronic spectroscopy. | uk_UA |
dc.identifier.citation | Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire / E.A. Vovk, A.T. Budnikov, S.V. Nizhankovskyi, S.I. Kryvonogov, A.A. Krukhmalev, M.V. Dobrotvorskaya // Functional Materials. — 2013. — Т. 20, № 2. — С. 253-258. — Бібліогр.: 10 назв. — англ. | uk_UA |
dc.identifier.issn | 1027-5495 | |
dc.identifier.other | DOI: dx.doi.org/10.15407/fm20.02.253 | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/120073 | |
dc.language.iso | en | uk_UA |
dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
dc.relation.ispartof | Functional Materials | |
dc.status | published earlier | uk_UA |
dc.subject | Technology | uk_UA |
dc.title | Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire | uk_UA |
dc.type | Article | uk_UA |
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