Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses

dc.contributor.authorKavetskyy, T.S.
dc.date.accessioned2017-05-26T09:18:15Z
dc.date.available2017-05-26T09:18:15Z
dc.date.issued2013
dc.description.abstractRevised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy.uk_UA
dc.description.sponsorshipThe author would like to thank Prof. Volodymyr Tsmots (Drohobych Ivan Franko State Pedagogical University) for stimulating discussions. This work is supported in part by the State Fund for Fundamental Researches of Ukraine (project #F40.2/019).uk_UA
dc.identifier.citationModified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.43.Fs
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117682
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleModified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glassesuk_UA
dc.typeArticleuk_UA

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