Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
dc.contributor.author | Shapovalov, A.P. | |
dc.contributor.author | Korotash, I.V. | |
dc.contributor.author | Rudenko, E.M. | |
dc.contributor.author | Sizov, F.F. | |
dc.contributor.author | Dubyna, D.S. | |
dc.contributor.author | Osipov, L.S. | |
dc.contributor.author | Polotskiy, D.Yu. | |
dc.contributor.author | Tsybrii, Z.F. | |
dc.contributor.author | Korchovyi, A.A. | |
dc.date.accessioned | 2017-06-18T10:44:03Z | |
dc.date.available | 2017-06-18T10:44:03Z | |
dc.date.issued | 2015 | |
dc.description.abstract | Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range. | uk_UA |
dc.identifier.citation | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | DOI: 10.15407/spqeo18.02.117 | |
dc.identifier.other | PACS 52.77.Dq, 73.61.Ey, 73.61.Jc, 78.40.Pg, 78.66.Fd | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121821 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique | uk_UA |
dc.type | Article | uk_UA |
Файли
Оригінальний контейнер
1 - 1 з 1
Завантаження...
- Назва:
- 01-Shapovalov.pdf
- Розмір:
- 419.08 KB
- Формат:
- Adobe Portable Document Format
Контейнер ліцензії
1 - 1 з 1
Завантаження...
- Назва:
- license.txt
- Розмір:
- 817 B
- Формат:
- Item-specific license agreed upon to submission
- Опис: