Ultra-high field transport in GaN-based heterostructures

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dc.contributor.authorVitusevich, S.A.
dc.contributor.authorDanylyuk, S.V.
dc.contributor.authorDanilchenko, B.A.
dc.contributor.authorKlein, N.
dc.contributor.authorZelenskyi, S.E.
dc.contributor.authorDrok, E.
dc.contributor.authorAvksentyev, A.Yu.
dc.contributor.authorSokolov, V.N.
dc.contributor.authorKochelap, V.A.
dc.contributor.authorBelyaev, A.E.
dc.contributor.authorPetrychuk, M.V.
dc.contributor.authorLuth, H.
dc.date.accessioned2017-06-15T03:10:37Z
dc.date.available2017-06-15T03:10:37Z
dc.date.issued2006
dc.description.abstractThis paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.uk_UA
dc.description.sponsorshipThe authors would like to thank V. Tilak, J. Smart, A. Vertiatchikh and L.F. Eastman (Cornell University) for their collaboration in this study. This work is supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (Project Monitor Dr. Colin Wood) and by Deutsche Forschungsgemeinschaft (project No. KL 1342/3). The work at Institute of Semiconductor Physics in Kyiv was supported by CRDF Project No. UE2-2439-KV-02 and Institute of Physics by Ukrainian FFR Project F7/379.uk_UA
dc.identifier.citationUltra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 72.20.Ht, 72.80.Ey, 73.40.-c
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121621
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleUltra-high field transport in GaN-based heterostructuresuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 3