Ohmic contacts based on Pd to indium phosphide Gunn diodes

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dc.contributor.authorBelyaev, A.E.
dc.contributor.authorBoltovets, N.S.
dc.contributor.authorBobyl, A.V.
dc.contributor.authorZorenko, A.V.
dc.contributor.authorArsentiev, I.N.
dc.contributor.authorKladko, V.P.
dc.contributor.authorKovtonyuk, V.M.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorKudryk, Ya.Ya.
dc.contributor.authorSachenko, A.V.
dc.contributor.authorSlipokurov, V.S.
dc.contributor.authorSlepova, A.S.
dc.contributor.authorSafryuk, N.V.
dc.contributor.authorGudymenko, A.I.
dc.contributor.authorShynkarenko, V.V.
dc.date.accessioned2017-06-13T16:51:23Z
dc.date.available2017-06-13T16:51:23Z
dc.date.issued2015
dc.description.abstractExperimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.uk_UA
dc.identifier.citationOhmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo18.03.317
dc.identifier.otherPACS 73.40.Cg, 73.40.Ns, 85.30.Fg
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121208
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleOhmic contacts based on Pd to indium phosphide Gunn diodesuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3