Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals

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dc.contributor.authorVirt, I.S.
dc.contributor.authorGorbunov, V.V.
dc.date.accessioned2017-06-11T13:30:54Z
dc.date.available2017-06-11T13:30:54Z
dc.date.issued2000
dc.description.abstractWe have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases significantly. An analysis is given of a model for radiation defect production. The photoconduction processes are explained from the standpoint of clusterization of such radiation defects.uk_UA
dc.description.sponsorshipThermal neutron irradiation has been perfomed at the nuclear reactor of the Institute for Nuclear Researches NASU. The authors are grateful to Dr. M.V. Pashkovskii for his valuable remarks and interest to this work.uk_UA
dc.identifier.citationEffect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals / I.S. Virt, V.V. Gorbunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 35-38. — Бібліогр.: 13 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.80, 72, 72.20 JV;
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120237
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleEffect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystalsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1