Electric properties of TlInS₂ single crystals

dc.contributor.author	Mustafaeva, S.N.
dc.contributor.author	Ismailov, A.A.
dc.contributor.author	Akhmedzade, N.D.
dc.date.accessioned	2017-06-15T03:43:26Z
dc.date.available	2017-06-15T03:43:26Z
dc.date.issued	2006
dc.description.abstract	Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV.	uk_UA
dc.identifier.citation	Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.20.Nr; 72.20Fr; 72.20.Ht; 72.20 Jv
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/121640
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Electric properties of TlInS₂ single crystals	uk_UA
dc.type	Article	uk_UA

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