Electric and dielectric properties of glasses of Cu-Sb-S-I system
dc.contributor.author | Rubish, V.M. | |
dc.date.accessioned | 2017-05-27T18:06:09Z | |
dc.date.available | 2017-05-27T18:06:09Z | |
dc.date.issued | 2003 | |
dc.description.abstract | D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu⁺S⁻SbS₂/₂ in the glass matrix define dielectric proporties of glasses. | uk_UA |
dc.identifier.citation | Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 72.15.Cz, 73.61.Jc, 77.22.-d | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117961 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Electric and dielectric properties of glasses of Cu-Sb-S-I system | uk_UA |
dc.type | Article | uk_UA |
Файли
Оригінальний контейнер
1 - 1 з 1
Контейнер ліцензії
1 - 1 з 1
Завантаження...
- Назва:
- license.txt
- Розмір:
- 817 B
- Формат:
- Item-specific license agreed upon to submission
- Опис: