Investigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral range

dc.contributor.authorVenger, E.F.
dc.contributor.authorEvtushenko, A.I.
dc.contributor.authorMelnichuk, L.Yu.
dc.contributor.authorMelnichuk, O.V.
dc.date.accessioned2017-05-30T17:01:45Z
dc.date.available2017-05-30T17:01:45Z
dc.date.issued2008
dc.description.abstractBased on the experimental data obtained, we performed the theoretical investigation of the external reflectance coefficients of uniaxial optically anisotropic polar ZnO single crystals subjected to the action of a high uniform magnetic field that is parallel to the crystal axis С and the surface under the condition that E⊥B (the Voigt configuration, Fig. 1). For the first time, we have found the regions in the external reflection spectra of ZnO single crystals, where new oscillations appear which are due to the effect of a high uniform magnetic field. A possibility of solving the direct and inverse problems in such a case is demonstrated.uk_UA
dc.identifier.citationInvestigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral range / E.F. Venger, A.I. Evtushenko, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 6-10. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.40.-q
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118594
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInvestigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral rangeuk_UA
dc.typeArticleuk_UA

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