Evidence for resonant bonding in phase-change materials studied by IR spectroscopy
| dc.contributor.author | Shportko, K. | |
| dc.contributor.author | Volker, H. | |
| dc.contributor.author | Wuttig, M. | |
| dc.date.accessioned | 2026-03-03T11:06:37Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | Phase-change materials (PCM) attract attention due to their unique properties. This remarkable portfolio also makes them promising for applications in novel data storage devices. In this study, we discuss differences in the optical properties of PCM and non-PCM in the IR caused by the presence or absence of resonant bonding. | |
| dc.description.sponsorship | K. Shportko gratefully acknowledges the funding from the DAAD (German Academic Exchange Service) and the SFB 917 ‘Resistively Switching Chalcogenides for Future Electronics – Structure, Kinetics and Device Scalability’. | |
| dc.identifier.citation | Evidence for resonant bonding in phase-change materials studied by IR spectroscopy / K. Shportko, H. Volker, M. Wuttig // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 69-73. — Бібліогр.: 22 назв. — англ. | |
| dc.identifier.doi | https://doi.org/10.15407/spqeo20.01.069 | |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 68.55.Ng, 78.20.-e, 78.30.Ly, 82.80.Gk | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/214910 | |
| dc.language.iso | en | |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | |
| dc.title | Evidence for resonant bonding in phase-change materials studied by IR spectroscopy | |
| dc.type | Article |
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