Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts

dc.contributor.authorFisun, V.V.
dc.contributor.authorBalkashin, O.P.
dc.contributor.authorKvitnitskaya, O.E.
dc.contributor.authorKorovkin, I.A.
dc.contributor.authorGamayunova, N.V.
dc.contributor.authorAswartham, S.
dc.contributor.authorWurmehl, S.
dc.contributor.authorNaidyuk, Yu.G
dc.date.accessioned2017-06-08T04:41:19Z
dc.date.available2017-06-08T04:41:19Z
dc.date.issued2014
dc.description.abstractI(V) characteristics and their first derivatives of ScS and ScN-type (S is superconductor, c is constriction, N is normal metal) point contacts (PCs) based on Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) were studied. ScS-type PCs with S = Nb,Ta, and Pb show Josephson-like resistively shunted I(V) curves with microwave induced Shapiro steps which satisfy relation 2eV = ω. The IcRN product (Ic is critical current, RN is normal state PC resistance) in these PCs is found to be up to 1.2 mV. All this data with the observed dependence of the Ic on the microwave power of ScS PCs with Pb counterelectrode indicates the presence of the singlet s-wave type pairing in Ba₁₋xNaxFe₂As₂. From the dV/dI(V) curves of ScN-type PCs demonstrating Andreev-reflection like features, the superconducting gap ∆ ratio 2∆/kBTc = 3.6 ± 1 for the compound with x = 0.35 was evaluated. Analysis of these dV/dI(V) at high biases V, that is well above ∆, testifies transition to the thermal regime in PCs with a voltage increase.uk_UA
dc.description.sponsorshipFunding by the National Academy of Sciences of Ukraine under project Ф3-19 is gratefully acknowledged. Yu.G.N. and O.E.K. would like to trank the IFW Dresden for hospitality and the Alexander von Humboldt Foundation for the financial support in the frame of a research group linkage program. S.W. acknowledges the Deutsche Forschungsgemeinshaft DFG (priority program SPP 1485 and Emmy Nother program: projects Bu887/15-1 and WU595/3-2) for support. We thank B. Büchner for valuable discussions.uk_UA
dc.identifier.citationJosephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts / V.V. Fisun, O.P. Balkashin, O.E. Kvitnitskaya, I.A. Korovkin, N.V. Gamayunova, S. Aswartham, S. Wurmehl, Yu.G. Naidyuk // Физика низких температур. — 2014. — Т. 40, № 10. — С. 1175-1181. — Бібліогр.: 24 назв. — англ.uk_UA
dc.identifier.issn0132-6414
dc.identifier.otherPACS 74.50.+r, 74.70.Dd, 74.45.+c
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119675
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectIII Международный семинар по микроконтактной спектроскопииuk_UA
dc.titleJosephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contactsuk_UA
dc.typeArticleuk_UA

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