Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts
dc.contributor.author | Fisun, V.V. | |
dc.contributor.author | Balkashin, O.P. | |
dc.contributor.author | Kvitnitskaya, O.E. | |
dc.contributor.author | Korovkin, I.A. | |
dc.contributor.author | Gamayunova, N.V. | |
dc.contributor.author | Aswartham, S. | |
dc.contributor.author | Wurmehl, S. | |
dc.contributor.author | Naidyuk, Yu.G | |
dc.date.accessioned | 2017-06-08T04:41:19Z | |
dc.date.available | 2017-06-08T04:41:19Z | |
dc.date.issued | 2014 | |
dc.description.abstract | I(V) characteristics and their first derivatives of ScS and ScN-type (S is superconductor, c is constriction, N is normal metal) point contacts (PCs) based on Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) were studied. ScS-type PCs with S = Nb,Ta, and Pb show Josephson-like resistively shunted I(V) curves with microwave induced Shapiro steps which satisfy relation 2eV = ω. The IcRN product (Ic is critical current, RN is normal state PC resistance) in these PCs is found to be up to 1.2 mV. All this data with the observed dependence of the Ic on the microwave power of ScS PCs with Pb counterelectrode indicates the presence of the singlet s-wave type pairing in Ba₁₋xNaxFe₂As₂. From the dV/dI(V) curves of ScN-type PCs demonstrating Andreev-reflection like features, the superconducting gap ∆ ratio 2∆/kBTc = 3.6 ± 1 for the compound with x = 0.35 was evaluated. Analysis of these dV/dI(V) at high biases V, that is well above ∆, testifies transition to the thermal regime in PCs with a voltage increase. | uk_UA |
dc.description.sponsorship | Funding by the National Academy of Sciences of Ukraine under project Ф3-19 is gratefully acknowledged. Yu.G.N. and O.E.K. would like to trank the IFW Dresden for hospitality and the Alexander von Humboldt Foundation for the financial support in the frame of a research group linkage program. S.W. acknowledges the Deutsche Forschungsgemeinshaft DFG (priority program SPP 1485 and Emmy Nother program: projects Bu887/15-1 and WU595/3-2) for support. We thank B. Büchner for valuable discussions. | uk_UA |
dc.identifier.citation | Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts / V.V. Fisun, O.P. Balkashin, O.E. Kvitnitskaya, I.A. Korovkin, N.V. Gamayunova, S. Aswartham, S. Wurmehl, Yu.G. Naidyuk // Физика низких температур. — 2014. — Т. 40, № 10. — С. 1175-1181. — Бібліогр.: 24 назв. — англ. | uk_UA |
dc.identifier.issn | 0132-6414 | |
dc.identifier.other | PACS 74.50.+r, 74.70.Dd, 74.45.+c | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/119675 | |
dc.language.iso | en | uk_UA |
dc.publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України | uk_UA |
dc.relation.ispartof | Физика низких температур | |
dc.status | published earlier | uk_UA |
dc.subject | III Международный семинар по микроконтактной спектроскопии | uk_UA |
dc.title | Josephson effect and Andreev reflection in Ba₁₋xNaxFe₂As₂ (x = 0.25 and 0.35) point contacts | uk_UA |
dc.type | Article | uk_UA |
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