About self-activated orange emission in ZnO

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dc.contributor.authorMarkevich, I.V.
dc.contributor.authorStara, T.R.
dc.contributor.authorBondarenko, V.O.
dc.date.accessioned2017-06-18T10:33:23Z
dc.date.available2017-06-18T10:33:23Z
dc.date.issued2015
dc.description.abstractNominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.uk_UA
dc.description.sponsorshipThis research has been financially supported by National Academy of Sciences of Ukraine (project III-4-11).uk_UA
dc.identifier.citationAbout self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 134-137. — Бібліогр.: 17 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo18.02.134
dc.identifier.otherPACS 81.05.Dz, 81.05.Je
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121804
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAbout self-activated orange emission in ZnOuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 2