Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
dc.contributor.author | Neimash, V.B. | |
dc.contributor.author | Puzenko, O.O. | |
dc.contributor.author | Kraitchinskii, A.M. | |
dc.contributor.author | Krasko, M.M. | |
dc.contributor.author | Putselyk, S. | |
dc.contributor.author | Claeys, C. | |
dc.contributor.author | Simoen, E. | |
dc.date.accessioned | 2017-06-11T13:11:43Z | |
dc.date.available | 2017-06-11T13:11:43Z | |
dc.date.issued | 2000 | |
dc.description.abstract | Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion. | uk_UA |
dc.identifier.citation | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/120226 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon | uk_UA |
dc.type | Article | uk_UA |
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