The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
| dc.contributor.author | Semchuk, O.Yu. | |
| dc.contributor.author | Gichan, О.І. | |
| dc.contributor.author | Grechko, L.G. | |
| dc.date.accessioned | 2017-05-31T18:48:22Z | |
| dc.date.available | 2017-05-31T18:48:22Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also ascertained, that waves belonging to the nearby diffraction orders differ from each other by π/2 in their phase. | uk_UA |
| dc.identifier.citation | The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 75.50.D, 78.20 | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118833 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors | uk_UA |
| dc.type | Article | uk_UA |
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