The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors

dc.contributor.authorSemchuk, O.Yu.
dc.contributor.authorGichan, О.І.
dc.contributor.authorGrechko, L.G.
dc.date.accessioned2017-05-31T18:48:22Z
dc.date.available2017-05-31T18:48:22Z
dc.date.issued2009
dc.description.abstractStudied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also ascertained, that waves belonging to the nearby diffraction orders differ from each other by π/2 in their phase.uk_UA
dc.identifier.citationThe Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 75.50.D, 78.20
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118833
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductorsuk_UA
dc.typeArticleuk_UA

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