Physical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineering

dc.contributor.authorZagoruiko, Yu.A.
dc.contributor.authorFedorenko, O.A.
dc.contributor.authorKovalenko, N.O.
dc.contributor.authorRom, M.A.
dc.contributor.authorMateychenko, P.V.
dc.date.accessioned2017-06-13T15:01:39Z
dc.date.available2017-06-13T15:01:39Z
dc.date.issued2000
dc.description.abstractThe vertical Bridgman method is used to obtain crystals of Zn₁₋x Mgx Se and ZnSe-CdS solid solutions (with 0.03 Ј x Ј 0.55 and Cd concentrations varying from 0.3 to 35 at.%, respectively). The composition of the samples is determined by means of electron-probe microanalysis. The methods of optical microscopy and X-ray analysis are used to investigate the structure of the crystals and to determine their lattice parameters. Investigated are the micro-hardness and microbrittleness of the grown ZnMgSe crystals, as well as their polarizational, optical, photoelectric and dielectric properties depending on Mg concentration. The obtained crystals are found to possess anisotropy of physical properties. The largest anisotropy of their mechanical, polarizational and optical properties is observed in the crystals containing 5-6 at.% of Mg. The samples with such a concentration of Mg are applicable as a base for making thermostable multifunctional IR optical elements which can operate within a wide spectral region.uk_UA
dc.description.sponsorshipThis work is supported in part by Science and Technology Center in Ukraine (STSU), Project #380.uk_UA
dc.identifier.citationPhysical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineering / Yu.A. Zagoruiko, O.A. Fedorenko, N.O. Kovalenko, M.A. Rom, P.V. Mateychenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 165-169. — Бібліогр.: 6 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 78.20.Fm, 61.10.- i, 62.20.Qp
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121104
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePhysical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineeringuk_UA
dc.typeArticleuk_UA

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