Efficiency a-Si:H solar cell. Detailed theory
dc.contributor.author | Kryuchenko, Yu.V. | |
dc.contributor.author | Sachenko, A.V. | |
dc.contributor.author | Bobyl, A.V. | |
dc.contributor.author | Kostylyov, V.P. | |
dc.contributor.author | Romanets, P.N. | |
dc.contributor.author | Sokolovskyi, I.O. | |
dc.contributor.author | Shkrebti, A.I. | |
dc.contributor.author | Terukov, E.I. | |
dc.date.accessioned | 2017-05-29T14:56:06Z | |
dc.date.available | 2017-05-29T14:56:06Z | |
dc.date.issued | 2012 | |
dc.description.abstract | We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters. | uk_UA |
dc.identifier.citation | Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118286 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Efficiency a-Si:H solar cell. Detailed theory | uk_UA |
dc.type | Article | uk_UA |
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