The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system

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dc.contributor.authorRubish, V.M.
dc.contributor.authorBih, L.
dc.contributor.authorMykaylo, O.A.
dc.contributor.authorGorina, O.V.
dc.contributor.authorMaryan, V.M.
dc.contributor.authorGasinets, S.M.
dc.contributor.authorSolomon, A.M.
dc.contributor.authorLazor, P.
dc.contributor.authorKostyukevych, S.O.
dc.date.accessioned2017-05-26T09:06:03Z
dc.date.available2017-05-26T09:06:03Z
dc.date.issued2013
dc.description.abstract(As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we observed SbSI nanocrystalline inclusions. It has been shown that the sizes of crystalline inclusions are dependent on the heat treatment regimes.uk_UA
dc.identifier.citationThe influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system / V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 123-127. — Бібліогр.: 27 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.43.Fs, 61.46.Bc, 78.30.Ly
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117678
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI systemuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2