Superconducting properties of a boson-exchange model of doped graphene

dc.contributor.authorLoktev, V.M.
dc.contributor.authorTurkowski, V.
dc.date.accessioned2017-05-21T19:27:14Z
dc.date.available2017-05-21T19:27:14Z
dc.date.issued2009
dc.description.abstractWe study the superconducting properties of a doped one-layer graphene by using a model in which the interparticle attraction is caused by a boson (phonon-like) excitations. We study the dependencies of the superconducting gap D and the mean-field critical temperature TcMF on the carrier density, attraction strength and the characteristic (Debye) bosonic frequency. In addition, we study the temperature-carrier density phase diagram of the model by taking into account the thermal fluctuations of the order parameter. We show that the fluctuations result in a significant suppression of TcMF, such that the real (Berezinskii– Kosterlitz–Thouless) critical temperature Tc is much lower than TcMF. The region Tc < T < TcMF is characterized by a finite density of states at the Fermi level (the pseudogap phase). We show that the width of the temperature interval of the pseudogap phase strongly depends on the model parameters—carrier concentration, attraction amplitude, and boson frequency.uk_UA
dc.identifier.citationSuperconducting properties of a boson-exchange model of doped graphene / V.M. Loktev, V. Turkowski // Физика низких температур. — 2009. — Т. 35, № 8-9. — С. 805-811. — Бібліогр.: 20 назв. — англ.uk_UA
dc.identifier.issn0132-6414
dc.identifier.otherPacs: 74.20.–z, 74.78.–w, 74.40. +k, 73.63.–b
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117304
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectЭлектронные свойства проводящих системuk_UA
dc.titleSuperconducting properties of a boson-exchange model of doped grapheneuk_UA
dc.typeArticleuk_UA

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