Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

dc.contributor.author	Kovalyuk, Z.D.
dc.contributor.author	Duplavyy, V.Y.
dc.contributor.author	Sydor, O.M.
dc.date.accessioned	2017-05-29T13:57:26Z
dc.date.available	2017-05-29T13:57:26Z
dc.date.issued	2012
dc.description.abstract	n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured.	uk_UA
dc.identifier.citation	Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Lq
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/118249
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe	uk_UA
dc.type	Article	uk_UA

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