Alpha-, beta-, gamma-radiometric measurements using semiconductor detectors
dc.contributor.author | Grigoryev, A.N. | |
dc.contributor.author | Sakun, A.V. | |
dc.contributor.author | Marushchenko, V.V. | |
dc.contributor.author | Bilyk, Z.V. | |
dc.contributor.author | Litvinov, Yu.V. | |
dc.contributor.author | Chernyavsky, O.Yu. | |
dc.contributor.author | Voronkin, E. | |
dc.date.accessioned | 2017-06-12T07:58:51Z | |
dc.date.available | 2017-06-12T07:58:51Z | |
dc.date.issued | 2014 | |
dc.description.abstract | Referring to shortcomings of modern radiation detection and monitoring devices, an operable prototype of the device for determination of the gamma radiation exposure dose rate within the range from 10 μ R/h to 1000 R/h, with the energy γ -radiation sensitivity range from 50 keV to 3 MeV, has been offered. The prototype is able to register the α-radiation and β-radiation flux density. The device operates using two detection units and a two-channel counting unit. Registration of the exposure dose rate is provided by using CdTe detector, and registration of the α-radiation and β-radiation flux density is provided by using Si detector. | uk_UA |
dc.identifier.citation | Alpha-, beta-, gamma-radiometric measurements using semiconductor detectors / A.N. Grigoryev, A.V. Sakun, V.V. Marushchenko, Z.V. Bilyk, Yu.V. Litvinov, O.Yu. Chernyavsky, E. Voronkin // Functional Materials. — 2014. — Т. 21, № 3. — С. 352-355. — Бібліогр.: 7 назв. — англ. | uk_UA |
dc.identifier.issn | 1027-5495 | |
dc.identifier.other | DOI: dx.doi.org/10.15407/fm21.03.352 | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/120474 | |
dc.language.iso | en | uk_UA |
dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
dc.relation.ispartof | Functional Materials | |
dc.status | published earlier | uk_UA |
dc.subject | Devices and instruments | uk_UA |
dc.title | Alpha-, beta-, gamma-radiometric measurements using semiconductor detectors | uk_UA |
dc.type | Article | uk_UA |
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