Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg

dc.contributor.author	Gryvul, V.I.
dc.contributor.author	Makhniy, V.P.
dc.contributor.author	Tkachenko, I.V.
dc.date.accessioned	2018-06-16T18:24:12Z
dc.date.available	2018-06-16T18:24:12Z
dc.date.issued	2007
dc.description.abstract	Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements.	uk_UA
dc.identifier.citation	Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/136987
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.status	published earlier	uk_UA
dc.title	Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg	uk_UA
dc.title.alternative	Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg	uk_UA
dc.type	Article	uk_UA

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