Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

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dc.contributor.authorCharikova, T.
dc.contributor.authorOkulov, V.
dc.contributor.authorGubkin, A.
dc.contributor.authorLugovikh, A.
dc.contributor.authorMoiseev, K.
dc.contributor.authorNevedomsky, V.
dc.contributor.authorKudriavtsev, Yu.
dc.contributor.authorGallardo, S.
dc.contributor.authorLopez, M.
dc.date.accessioned2017-06-26T05:11:20Z
dc.date.available2017-06-26T05:11:20Z
dc.date.issued2015
dc.description.abstractThe magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.uk_UA
dc.description.sponsorshipThis work was done within RAS Program (project No. 12-P-2-1018) with partial support of RFBR (grant No. 15-02-08909). Authors from Cinvestav thank to SENER and CONACYT, both from Mexico for a financial support of this study, grant No. 152244.uk_UA
dc.identifier.citationMagnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn0132-6414
dc.identifier.otherPACS: 72.80.Ey, 75.50.Pp
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/122039
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectXX Уральская международная зимняя школа по физике полупроводниковuk_UA
dc.titleMagnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganeseuk_UA
dc.typeArticleuk_UA

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Физика низких температур, 2015, № 02