Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields
| dc.contributor.author | Taqi, A. | |
| dc.contributor.author | Diouri, J. | |
| dc.date.accessioned | 2017-05-29T13:41:39Z | |
| dc.date.available | 2017-05-29T13:41:39Z | |
| dc.date.issued | 2012 | |
| dc.description.abstract | Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in the framework of the effective mass approximation and two-band model. Illustrations have been given for GaAlAsGaAs-GaAlAs and CdMnTe-CdTe-CdMnTe parabolic quantum wells. The comparison with existing data displays good agreement. | uk_UA |
| dc.identifier.citation | Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 21-25. — Бібліогр.: 10 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 71.15.Nc, 71.35.-y, 73.21.Fg | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118239 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields | uk_UA |
| dc.type | Article | uk_UA |
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