Spectra of the photo-electric phenomena physically differentiated on the light absorption factor

dc.contributor.authorBerezhinsky, L.I.
dc.contributor.authorVenger, E.F.
dc.contributor.authorMatyash, I.E.
dc.contributor.authorSerdega, B.K.
dc.date.accessioned2017-06-05T14:31:17Z
dc.date.available2017-06-05T14:31:17Z
dc.date.issued2004
dc.description.abstractThe pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties was created by uniaxial compression. The spectral characteristics of the polarization difference describing above effects were measured. We found that: а) the pleochroism spectrum of photoconductivity is a derivative with respect to the absorption factor of a photocurrent function; b) the pleochroism spectrum of the gate photo-emf contains dichroic components, determined by the sample thickness, diffusion length of majority carriers, and layer thickness of a spatial charge.uk_UA
dc.identifier.citationSpectra of the photo-electric phenomena physically differentiated on the light absorption factor / L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 441-445. — Бібліогр.: 5 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 72.40.+w
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119230
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleSpectra of the photo-electric phenomena physically differentiated on the light absorption factoruk_UA
dc.typeArticleuk_UA

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