Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅
dc.contributor.author | Golovenchits, E.I. | |
dc.contributor.author | Sanina, V.A. | |
dc.contributor.author | Zalesskii, V.G. | |
dc.contributor.author | Scheglov, M.P. | |
dc.date.accessioned | 2017-05-20T14:28:39Z | |
dc.date.available | 2017-05-20T14:28:39Z | |
dc.date.issued | 2010 | |
dc.description.abstract | The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers. | uk_UA |
dc.description.sponsorship | The authors would like to thank N.V. Zaitzeva for x-ray phase analysis of the samples. The work was supported by the Russian Foundation for Basic Research (grant 08-02-00077) and Presidium of RAS (Programme 03). | uk_UA |
dc.identifier.citation | Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ. | uk_UA |
dc.identifier.issn | 0132-6414 | |
dc.identifier.other | PACS: 75.47.Lx, 76.50.+g, 77.80.–e | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117176 | |
dc.language.iso | en | uk_UA |
dc.publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України | uk_UA |
dc.relation.ispartof | Физика низких температур | |
dc.status | published earlier | uk_UA |
dc.subject | Магнитоэлектрические эффекты в сегнетомагнетиках | uk_UA |
dc.title | Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ | uk_UA |
dc.type | Article | uk_UA |
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