Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis

dc.contributor.authorRubish, V.M.
dc.contributor.authorStefanovich, V.O.
dc.contributor.authorMaryan, V.M.
dc.contributor.authorMykaylo, O.A.
dc.contributor.authorShtets, P.P.
dc.contributor.authorKaynts, D.I.
dc.contributor.authorYurkin, I.M.
dc.date.accessioned2017-05-30T05:31:58Z
dc.date.available2017-05-30T05:31:58Z
dc.date.issued2014
dc.description.abstractThe structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI.uk_UA
dc.identifier.citationRaman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.43.Fs, 61.46.Bc, 77.84.Bw, 78.30.Ly
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118348
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleRaman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basisuk_UA
dc.typeArticleuk_UA

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