Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

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dc.contributor.authorDotsenko, Yu.P.
dc.contributor.authorErmakov, V.M.
dc.contributor.authorGorin, A.E.
dc.contributor.authorKhivrych, V.I.
dc.contributor.authorKolomoets, V.V.
dc.contributor.authorMachulin, V.F.
dc.contributor.authorPanasjuk, L.I.
dc.contributor.authorProkopenko, I.V.
dc.contributor.authorSus', B.B.
dc.contributor.authorVenger, E.F.
dc.date.accessioned2017-05-27T20:02:34Z
dc.date.available2017-05-27T20:02:34Z
dc.date.issued2003
dc.description.abstractActivation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out.uk_UA
dc.identifier.citationThermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 61.72.Tt, 61.80.-x
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117987
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated siliconuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2