Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
dc.contributor.author | Tkach, V.N. | |
dc.date.accessioned | 2017-06-07T12:24:52Z | |
dc.date.available | 2017-06-07T12:24:52Z | |
dc.date.issued | 2002 | |
dc.description.abstract | A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate. | uk_UA |
dc.identifier.citation | Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 61.10.N, 61.66, 68.35.B | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/119563 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates | uk_UA |
dc.type | Article | uk_UA |
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