Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application

dc.contributor.authorMazur, Yu.I.
dc.contributor.authorTarasov, G.G.
dc.contributor.authorKuzmenko, E.V.
dc.contributor.authorBelyaev, A.E.
dc.contributor.authorHoerstel, W.
dc.contributor.authorKraak, W.
dc.contributor.authorMasselink, W.T.
dc.date.accessioned2017-06-11T14:07:18Z
dc.date.available2017-06-11T14:07:18Z
dc.date.issued1999
dc.description.abstractThe peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic quaternary solid solution Hg₁₋x₋yCdxMnySe (x = 0.10, y = 0.02, Eg = 45 meV) by means of Shubnikov-de Haas oscillations. It is shown that due to the s-p hybridization of electron wavefunctions the exchange constant α turns out in α complicated function of energy gap Eg and electron concentration which changes from positive αN₀ = 0.15 eV to negative αN₀ = -0.28 eV values which are typically accepted for wide gap semimagnetic semiconductors.uk_UA
dc.description.sponsorshipAuthors are indebted to Dr. S.Yu. Paranchich for the high quality crystals preparation. This work is supported by the DFG grant N⁰ HO 1300/2-1 and 436UKR113/40/0uk_UA
dc.identifier.citationQuaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application / Yu.I. Mazur, G.G. Tarasov, E.V. Kuz'menko, A.E. Belyaev, W. Hoerstel, W. Kraak, W.T. Masselink // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 37-45. — Бібліогр.: 32 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 72.15.Gd, 72.20. My, 73.61.Ga.
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120254
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleQuaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic applicationuk_UA
dc.typeArticleuk_UA

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