Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
dc.contributor.author | Olenych, І.B. | |
dc.date.accessioned | 2017-05-31T05:26:19Z | |
dc.date.available | 2017-05-31T05:26:19Z | |
dc.date.issued | 2012 | |
dc.description.abstract | Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as compared with that of single crystal silicon. Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has been investigated. The results are explained in the frame of qualitative model that involves formation of p-n-transitions in these structures as a result of inversion of the conductivity type in porous silicon nanocrystals under the influence of adsorption of molecular iodine | uk_UA |
dc.description.sponsorship | The author thanks to Prof. L.S. Monastyrskii, Dr. B.S. Sokolovskii and Prof. O.I. Aksimentyeva for discussion of the results | uk_UA |
dc.identifier.citation | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 73.50.Pz, 73.63.-b | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118731 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates | uk_UA |
dc.type | Article | uk_UA |
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