Structure and electrical properties of In₂Se₃Mn layered crystals

Abstract

Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along (σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value ΔЕδ between the layers were calculated for the crystals under investigations.