Electrical properties of macroporous silicon structures

dc.contributor.authorKarachevtseva, L.A.
dc.contributor.authorLytvynenko, O.A.
dc.contributor.authorMalovichko, E.A.
dc.contributor.authorSobolev, V.D.
dc.contributor.authorStronska, O.J.
dc.date.accessioned2017-06-05T15:59:59Z
dc.date.available2017-06-05T15:59:59Z
dc.date.issued2001
dc.description.abstractThe dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls.uk_UA
dc.identifier.citationElectrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 71.25.Rk, 81.60.Cp
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119238
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleElectrical properties of macroporous silicon structuresuk_UA
dc.typeArticleuk_UA

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