Electrical properties of macroporous silicon structures
dc.contributor.author | Karachevtseva, L.A. | |
dc.contributor.author | Lytvynenko, O.A. | |
dc.contributor.author | Malovichko, E.A. | |
dc.contributor.author | Sobolev, V.D. | |
dc.contributor.author | Stronska, O.J. | |
dc.date.accessioned | 2017-06-05T15:59:59Z | |
dc.date.available | 2017-06-05T15:59:59Z | |
dc.date.issued | 2001 | |
dc.description.abstract | The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls. | uk_UA |
dc.identifier.citation | Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 71.25.Rk, 81.60.Cp | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/119238 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Electrical properties of macroporous silicon structures | uk_UA |
dc.type | Article | uk_UA |
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